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G3717QE1U

24V/12A Ideal Diode
The G3717B contains single power path ideal diode that uses an N-MOSFET replace for. The total capable of supplying is up to 12A with a typical forward conduction resistance of 5m. It results in lower conduction forward voltage and lower power dissipation, smaller PCB layout size, and elimination of heatsink in high-power applications.

Downloads

EDS-3717-1701-221003-0.2
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Specifications
Vin (V)
min.
4.5
max.
24
RON
(mΩ)
20
VOUT Rising
(ms)
--
IOUT
(A)
6
Flag
N
Dis-R
(Ω)
N
Note
Ideal Diode
Package
DFN3X3-10
Datasheet
EDS-3717-1701-221003-0.2.pdf
Application Fields
Computer Applications

Computer Applications

GMT is committed to developing various circuit switch solutions to achieve protection for systems and devices.

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